bav300 thru bav303 switching diodes features ? saving space ? silicon epitaxial planar diodes ? hermetic sealed parts ? fits onto sod-323/sot-23 footprints ? electrical data identical with the devices bav100?bav103 maximum ratings continuous reverse voltage bav300 bav301 bav302 bav303 v r 50v 100v 150v 200v t a =25 repetitive peak reverse voltage bav300 bav301 bav302 bav303 v rrm 60v 120v 200v 250v t a =25 forward dc current i f 250ma t a =25 repetitive peak forward current i frm 625ma f=50hz, t a =25 surge forward current i fsm 1.0a t p =1s, t j =25 thermal resistance junction to ambient r thja 500k/w note (1) junction temperature t j 175 storage temperature range t stg -65 to + 175 note: (1) mounted on epoxy-gl ass hard tissue, fig.4 35 m copper clad, 0.9 mm 2 copper area per electrode electrical characteristics @ 25 c unless otherwise specified maximum forward voltage v f 1.00v i f = 100ma ,t a =25 maximum leakage current bav300 bav300 bav301 bav301 bav302 bav302 bav303 bav303 i r 100na 15 a 100na 15 a 100na 15 a 100na 15 a v r =50v v r =50v, tj=100 v r =100v v r =100v, tj=100 v r =150v v r =150v, tj=100 v r =200v v r =200v, tj=100 maximum leakage current bav300 bav301 bav302 bav303 v (br) 60v 120v 200v 250v i r =100 a, t p /t=0.01, t p =0.3ms diode capacitance c d 1.5pf v r =0v, f=1.0mhz maximum reverse recovery time t rr 50ns i f =10ma, i r =30ma i rr =3.0ma, r l =100 ? differential forward resistance r f 5.0 ? i f =10ma revision: 3 2006/05/28 micromelf dimensions inches mm dim min max min max note a .071 .079 1.8 2.0 b .004 .008 .10 .20 c .047 .051 1.20 1.30 ? a b c cathode mark
omponents 20736 marilla street chatsworth !"# $
% !"# mcc 0.030? 0. 039 0.055? suggested solder pad layout tm micro commercial components www. mccsemi .com 1 of 3
fig. 1 reverse current vs. junction temperature fig. 2 forward current vs. forward voltage fig. 3 differential forward resistance vs. forward current 0 40 80 120 160 0.01 0.1 1 10 1000 i - reverse current ( a ) r t j - junction temperature ( c) 200 94 9084 100 scattering limit v r =v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i - forward current ( ma ) f v f - forward voltage ( v ) 2.0 94 9085 scattering limit t j =25 c 0.1 1 10 1 10 100 1000 r - differential forward resistance ( ) f i f - forward current ( ma ) 100 94 9089 ? t j =25 c fig. 4 board for r thja definition (in mm) 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 bav300 thru bav303 mcc revision: 3 2006/05/28 tm micro commercial components www. mccsemi .com 2 of 3
mcc revision: 3 2006/05/28 tm micro commercial components www. mccsemi .com 3 of 3 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose
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